SIGC156T60SNR2C edited by infineon technologies ai ps dd hv3, l 7282 - s , edition 2 , 28.11 .2003 igbt chip in npt - technology this chip is used for: igbt - modules features: 600v npt technology 100m chip short circuit prove positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die size package ordering code sigc156t60sn r2c 600v 200a 12.5 x 12.5 mm 2 sawn on foil q67050 - a4154 - a003 mechanical parameter: raster size 12.5 x 12.5 area total / active 156.25 / 138.2 emitter pad size 8x( 2.58x4.78 ) gate pad size 0.8 x 1.46 mm 2 thickness 100 m wafer size 150 mm flat position 90 deg max.possible chips per wafer 84 passivation frontside photoimide emitter metallization 3200 nm al si 1% collector metallization 1400 nm ni ag ? system suitable for e poxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temper ature of 23c
SIGC156T60SNR2C edited by infineon technologies ai ps dd hv3, l 7282 - s , edition 2 , 28.11 .2003 maximum ratings: parameter symbol value unit collector - emitter voltage , t j =25 c v ce 600 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 600 a gate emitter v oltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip), t j =25 c, unless otherwise specified: value parameter symbol co nditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v, i c =5ma 600 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =200a 1.6 2 2.5 gate - emitter threshold voltage v ge(th) i c =4ma, v ge =v ce 3 4 5 v zero gat e voltage collector current i ces v ce =600v, v ge =0v 13.5 a gate - emitter leakage current i ges v ce =0v, v ge =2 0v 600 na integrated gate resistor r gint 5 w dynamic characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capacitance c iss - 10330 12400 output capacitance c oss - 970 1160 reverse transfer capacitance c rss v ce =25v v ge =0v f =1mhz - 594 710 p f switching characteristics (tested at component) , inductive load: value parameter symbol conditions 2) min. typ. max. unit turn - on delay time t d(on) - 70 98 rise time t r - 60 84 turn - off delay time t d(off) - 500 700 fall time t f t j =150 c v cc =400v i c =200a v ge =+15/0v r g =1.7 w - 100 140 ns 2) switching conditions different to 600v stan dard igbt 2, under comparable switching conditions 40% faster turnoff than standard igbt 2. v alues also influenced by parasitic l - and c - in measurement and package.
SIGC156T60SNR2C edited by infineon technologies ai ps dd hv3, l 7282 - s , edition 2 , 28.11 .2003 chip drawing:
SIGC156T60SNR2C edited by infineon technologies ai ps dd hv3, l 7282 - s , edition 2 , 28.11 .2003 further electrical characteristics: this chip data sheet refers t o the device data sheet description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich ko mmunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of de livery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc ma nufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or syst ems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life s upport devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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